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国際会議録(Conference List)

Defects in Semiconductors (ICDS)

"Lattice Defects in Semiconductors"
"Radiation Effects in Semiconductors"
"Defects and Radiation Effects in Semiconductors"より改題

     
No. Year Place Book Journal Note
1st 1959 Gatlinburg
(USA)
2nd 1962 Kyoto
(Japan)
3rd 1964 Royaumont
(France)
4th
Lattice defects in
semiconductors
1966 Tokyo
(Japan)
Tohoku Univ.
OPAC
5th
Radiation effects in
semiconductors
1967 Santa Fe
(USA)
Tohoku Univ.
OPAC
6th 1970 Albany
(USA)
Tohoku Univ.
OPAC
7th
Radiation damage
and defects in
semiconductors
1972 Reading
(UK)
Other Univ.
OPAC
8th
Lattice defects in
semiconductors
1974 Freiburg
(Germany)
I-B,a521
OPAC
9th
Radiation effects in
semiconductors
1976 Dubrovnik
(Yugoslavia)
Other Univ.
OPAC
10th
Defects and
radiation effects in
semiconductors
1978 Nice
(France)
I-B,a607
OPAC
11th 1980 Oiso
(Japan)
Tohoku Univ.
OPAC
12th
Defects in
Semiconductors
1982 Amsterdam
(Netherlands)
Physica B+C
v.116 (1983)

OPAC
Elsevier
13th 1984 Coronado
(USA)
I-B,a721-13
OPAC
14th 1986 Paris
(France)
I-B,a721-14
OPAC
15th 1988 Budapest
(Hungary)
I-A,a443
OPAC
16th 1991 Bethlehem
(Pennylvania)
I-B,a721-16
OPAC
17th 1993 Gmunden
(Austria)
I-A,a506
OPAC
18th 1995 Sendai
(Japan)
I-A,a540
OPAC
19th 1997 Aveiro
(Portugal)
I-B,a721-19
OPAC
20th 1999 Berkeley
(USA)
Physica B
v.273-274 (1999)

OPAC
Elsevier
21th 2001 Giessen
(Germany)
Physica B
v.308-310 (2001)

OPAC
Elsevier
22nd 2003 Aarhus
(Denmark)
Physica B
v.340-342 (2003)

OPAC
Elsevier
23th 2005 Awaji-Island
(Japan)
Physica B
v.376-377 (2006)

OPAC
Elsevier
24th 2007 New Mexico
(USA)
Physica B
v.401-402 (2007)
Elsevier
25th 2009 St. Petersburg
(Russia)
Physica B
v.404(23-24)(2009)
Elsevier
26th 2011 Christchurch
(New Zealand)
Physica B
v.407(15)(2012)
Elsevier
27th 2013 Bologna
(Italy)
AIP Conf. Proc.
No.1583(2014)
AIP
28th 2015
(Jul.27-31)
Espoo
(Finland)
29th 2017
(Jul.31-Aug.4)
Matsue
(Japan)
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